Excellent high-temperature characteristics for 1.3 μm-strained MQW ASM-DC-PBH LDs fabricated by pulse-mode selective MOVPE

LDs (L=300μm, 30%-90%) with a characteristically low threshold (I th =12mA, 18mA) and high efficiency (η s =0.37W/A, 0.33W/A) were produced at high temperature (85°C, 100°C). A low operation current was achieved of 56 mA, 74 mA for 15mW (@85°C, 100°C), the lowest ever reported for 300μm-cavity InGaAsP-MQW LDs.