Long-Range Magnetic Interaction in InGaAs/GaAs/δ-〈Mn〉 Heterostructures

Low-temperature circularly polarized electroluminescence in InGaAs/GaAs/δ-〈Mn〉 heterostructures has been studied. It is established that the degree of circular polarization weakly depends on spatial separation of the active region and magnetic layer and is retained even at a spacer layer thickness of 12 nm. The observed phenomenon is related to the long-range magnetic interaction of carriers and Mn ions.