The Auger recombination coefficient in InAs and GaSb derived from the infrared dynamical plasma reflectivity

A dynamical model giving the infrared plasma reflection in a semiconductor is used to reproduce the transient reflectivity at 10.6??m due to an intense photo-plasma. In this way we have derived the `cubed' coefficient of the Auger recombination in indium arsenide and gallium antimonide from the stationary peak reflectivity produced by a?ns Nd laser. We have derived the cubic coefficients 12(4)?10-27?cm6?s-1 and 9(3)?10-28?cm6?s-1 for InAs and GaSb respectively.