Non-volatile memory

The present invention provides a nonvolatile memory, comprising at least (71), the first electrode (71) isolated from the first electrode a second electrode (72) on a substrate, a first electrode (71) and a second electrode ( conductive organic thin film (73) 72) are electrically connected. Conductive organic thin film (73) having a first display state of the first electric resistance value and displaying a second state of the second electric resistance value, a transition from a first state to a second electrically charged state from a first voltage and a second threshold different electrical power state to a first state, a second threshold voltage, a first power state or the second state is electrically held in the range of a first threshold voltage and second threshold voltage. Conductive organic thin film (73) and the surface of the substrate by covalent bonds. On the conductive organic thin film (73) can be connected to a diode (74). Thus, it provides a change in resistance value of the conductive organic thin film can be utilized (73) for recording the write and read, and easy integration of non-volatile memory.