Electron transport effects in the IR photoconductivity of InGaAs/GaAs structures with quantum dots

We have studied the temperature dependence of the Hall effects in multilayer selectively doped InGaAs/GaAs heterostructures with quantum dots (QDs). It was found that structures possessing photoconductivity in the IR range exhibit a sharp (nearly exponential) growth of the conductivity and Hall mobility in the temperature interval from 8 to 30 K at a virtually constant Hall coefficient and electron density. A new mechanism of the lateral photoconductivity in the structures with QDs is proposed which is related to the change in the electron mobility in the two-dimensional channel as a result of a decrease in the Coulomb scattering on charged QDs.