Lithography method for preventing a lithographic exposure of the peripheral area of a semiconductor wafer

A method for preventing the formation of black silicon in a patterned region at an edge of a semiconductor wafer (10), comprising the steps of: Applying a layer of photoresist (20) on a semiconductor wafer (10); Applying a solution (30) onto the photoresist in a peripheral area of ​​the semiconductor wafer (10); Exposing the layer of photoresist (20) with radiation, preventing the solution (30) that, in the photoresist in the peripheral area (21) of the semiconductor wafer (10) photochemical changes occur due to radiation exposure; Developing the photoresist (20a) to form a structure (20b), while preventing the solution (30) that is dissolved the exposed photoresist in the peripheral area (21) of the semiconductor wafer (10) by a developing agent; and Performing an etching process on an exposed portion of the semiconductor wafer (10), the photoresist in the peripheral area (21) of the semiconductor wafer (10) prevents the formation of black silicon in the patterned region during the etching process.