Suppression of reverse-short-channel effect in sub-0.1 /spl mu/m n-MOSFETs with Sb S/D implantation

A study is presented into the reverse-short-channel effect (RSCE) for Sb S/D ion implantation at 10 keV. A high impurity concentration is found to reduce interstitial movement in the channel, which restricts the level RSCE at short-channel lengths. The interstitials can be healed by thermal treatment at 850/spl deg/C directly after ion implantation, resulting in the suppression of the RSCE.