Metal organic vapour phase epitaxial growth and characterization of (GaIn)P layers grown with different P-containing precursors

Abstract The suitability of ditertiarybutylphosphine (DitBuPH) for the low-pressure MOVPE growth of (GaIn)P has been investigated. This source is distinguished by a further reduction of the direct H-functions in the molecule, its liquid state and its suitable vapour pressure and is therefore advantageous from the toxicity and safety viewpoint. The optical and structural properties are compared with those obtained using tertiarybutylphosphine (TBP) and PH 3 . Moreover, doping experiments have been carried out using disilane and diethylzinc as dopants. No difference in the growth and doping behaviour for all three used P-sources could be determined and the data are in good agreement with literature values.