ZnO:Ga conducting-films grown by DC arc-discharge ionplating

Abstract For the first time, DC arc-discharge ionplating was used to grow low-resistivity ZnO:Ga conducting-films at high deposition rate. Low-resistivity ZnO:Ga conducting films were grown at a rate of over 100 A/s by using DC arc-discharge ionplating at a discharge current of 150 A. The resistivity of this film was about 2×10 −4 Ω cm. The lowest film resistivity, 1.6×10 −4 Ω cm, was obtained on an inexpensive soda lime glass substrate at 350°C in which the Ga content was about 4at%.