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Traps characterization inSi-doped GaN/AlGaN/GaN HEMT on SiC by means of low frequency techniques
Traps characterization inSi-doped GaN/AlGaN/GaN HEMT on SiC by means of low frequency techniques
2005
A. Sozza
Christian Dua
N. Sarazin
E. Morvan
Sylvain Delage
Fabiana Rampazzo
Augusto Tazzoli
F. Danesin
Gaudenzio Meneghesso
Enrico Zanoni
Arnaud Curutchet
Nathalie Malbert
Nathalie Labat
Keywords:
Materials science
Doping
Optoelectronics
Low frequency
High-electron-mobility transistor
gan algan
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