Selective growth of nanotubes within vias using an ion beam

A method for selectively culturing one or more carbon nanotubes described, the method comprising the steps of: forming an insulating layer (10) on a substrate (12), said insulating layer having an upper surface (14); Forming a through contact (18) in the insulating layer; Forming an active metal layer (30) on the insulating layer, which includes surfaces of the side walls and the bottom of the contact passage; and removal of the active metal layer from portions of the upper surface by means of an ion beam to allow the selective growth of one or more carbon nanotubes within the through-contact.