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A Study of Threshold Voltage Instability in 4H-SiC MOSFETs with POCl3- and NO-Annealed Gate Oxides
A Study of Threshold Voltage Instability in 4H-SiC MOSFETs with POCl3- and NO-Annealed Gate Oxides
2013
Kanafuji Natsuko
Yano Hiroshi
Osawa Ai
Hatayama Tomoaki
Fuyuki Takashi
Keywords:
Drain-induced barrier lowering
Instability
Threshold voltage
Annealing (metallurgy)
Negative-bias temperature instability
Overdrive voltage
Reverse short-channel effect
Electronic engineering
Materials science
threshold voltage instability
Optoelectronics
Correction
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