ANOMALOUS DAMAGE BEHAVIOR OF BF2+ IMPLANTATION IN SILICON

The anomalous damage behavior of BF2+ implantation into silicon at 300 K and 77 K has been investigated by using grazing angle Rutherford backscattering and channeling in combined with transmission electron microscopy. The damage or the amorphous layer produced by BF2+ implantation is different from other heavier ions (> 27Al+). For BF2+ implantation at 300 K, there are two damage peaks, one at a depth near the projectile range of the ions, the other at the near surface. While for BF2+ implantation at 77 K, the damage or the amorphous layer first occurs at the surface, then the amorphous layer is extended to the bulk of silicon with increasing does.