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Charged defects reduction in gate insulator with multivalent materials
Charged defects reduction in gate insulator with multivalent materials
2009
Kouda
Umezawa
Kakushima
Ahmet
Shiraishi
Chikyow
Yamada
Iwai
Keywords:
Gate oxide
Reduction (complexity)
Optoelectronics
Partial pressure
gate insulator
Oxygen
MOSFET
Silicon
Logic gate
Materials science
Correction
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