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Characterization of Ge ions implantation in Sb 2 Te 3 thin films for high speed phase change memory application
Characterization of Ge ions implantation in Sb 2 Te 3 thin films for high speed phase change memory application
2019
Xin Zhang
Zhonghua Zhang
Sannian Song
Qianqian Zheng
Wenlei Yu
Wanting Zheng
Xiuwei Zhu
Hehong Shao
Juan Zhang
Liangliang Chen
Keywords:
Materials science
Thin film
Optoelectronics
Phase-change memory
Ion
Correction
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