ZnO epitaxial layers grown on nitridated Si(100) substrate with HT-GaN/LT-ZnO double buffer

Abstract ZnO epitaxial layers were successfully grown on nitridated Si(1 0 0) substrate with high-temperature (HT) GaN and low-temperature ZnO double buffer layers by molecular beam epitaxy. It was found that the HT-GaN buffer was crystalline with both hexagonal and cubic phases. It was also found that numerous cone-shaped nano-islands were formed on the ZnO epitaxial layers with density, average diameter and average height of 1.25×10 9  cm −2 , 300 nm and 150 nm, respectively. X-ray diffraction and photoluminescence results both indicate that quality of our ZnO epitaxial layers was good.