Annealing the semiconductor structure located on the flexible substrate

The present invention relates to the technical field of semiconductor technology, discloses a method of annealing the semiconductor structure on a flexible substrate. In the present invention, by using microwave heating of a metal or a semiconductor on the structure of the flexible substrate is annealed, since the microwave heating has a characteristic of selectively heated material, such metal or annealing the semiconductor structure on a flexible substrate positioned on when, selectively only the amorphous silicon layer or a metal layer is heated, and the flexible substrate does not absorb or do not substantially absorb microwave energy, and therefore the flexible substrate is not heated to a high temperature microwave annealing, thereby It ensures that the flexible substrate is not broken; and microwave heating can be heated simultaneously heating the material both inside and outside, while warming, uniform heating, therefore, the present invention provides a method to complete the semiconductor structures on a metal or a flexible substrate positioned at a low temperature to annealing, and uniform heating, a high heating energy efficiency.