Having a laminated structure of the oxide semiconductor thin film layer and a thin film transistor
2011
A laminated structure, characterized in that it is a laminated structure comprising an oxide layer and an insulating layer, wherein a carrier concentration of the oxide layer is 1018 / cm3 or less, the average crystal grain size of 1μm or more, the a columnar crystalline oxide layer disposed on a surface of the insulating layer.
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