Behavior of charges locally injected into nanothin high-k SmScO3 dielectric

The behavior of charges locally injected from the probe of an atomic force microscope into nanothin films of high-k SmScO3 dielectric deposited on a silicon substrate is studied by the method of Kelvin probe force microscopy. Prior to examination, the films were annealed at different temperatures. At temperatures above 900°C, the amorphous as-prepared films exhibit polycrystalline inclusions. In the films annealed at 900°C, the injected charge persists for a long time that several tens of times exceeds the charge retention time observed when conventional dielectrics, such as SiO2 and Si3N4, are used. In addition, the diffusion of carriers in the plane of the dielectric layers sharply slows down.