InP microcavity LED emitting at 1.55 /spl mu/m

B. Depreter,J. Bolondelie,Ingrid Moerman,R. Baets,P. Van Daele,Piet Demeester

InP microcavity LED emitting at 1.55 /spl mu/m

1997

B. Depreter
J. Bolondelie
Ingrid Moerman
R. Baets
P. Van Daele
Piet Demeester

An InP microcavity LED has been successfully grown using MOCVD. The device shows a narrow spectral linewidth, and a high external quantum efficiency that may be improved further after subsequent processing.

Keywords:

Optoelectronics
Light-emitting diode
Metalorganic vapour phase epitaxy
Optics
Physics
Quantum efficiency
Laser linewidth
molecular beam epitaxial growth

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