Gate-controlled electron-electron interactions in an In0.53Ga0.47As/InP quantum well structure

Abstract We study the parabolic negative magnetoresistivity in a gated In 0.53 Ga 0.47 As/InP quantum well structure where the scattering potential is predominantly long range. This magnetoresistivity is caused by the electron–electron interactions and is fitted to estimate the interaction corrections to the Drude conductivity. These corrections are smaller than the prediction of a recent theory [I.V. Gornyi, A.D. Mirlin, Phys. Rev. Lett. 90 (2003) 076801], and can be quantitatively described by Altshuler’s theory.