Synthesis of tin sulphide thin film by simple arrested precipitation technique for solar cell application

In the present study we have synthesized Tin Sulphide (SnS2) thin films by using simple arrested precipitation technique (APT). The optostructural, morphological, and compositional analysis of SnS2 thin film were studied to investigate the optical absorption, surface morphology and elemental compositional properties of the material. The structural analysis of thin films was done by X-ray diffraction technique (XRD) which confirms the hexagonal crystal structure of the SnS2. SnS2 thin film showed optical band gap energy 2.12eV. The morphological studies of SnS2 thin films were done by scanning electron microscopy (SEM). The SEM micrographs depict the nanogrannular morphology. Energy dispersive X-ray analysis (EDS) confirms the presence and stoichiometric composition of Sn and S elements in the synthesized material. The photoelectrochemical solar cell performance of SnS2 thin films was found to 0.053%.