Transverse junction buried heterostructure (TJ-BH) laser diode grown by MOVPE

Abstract The sucessful application of a MOVPE growth method instead of the LPE method to fabricate a transverse junction buried heterostructure (TJ-BH) laser diode (LD) has been achieved in an attempt to improve the characteristics of this type of LD over LDs produced by the LPE method. Laser diodes fabricated by MOVPE/LPE hybrid processes have shown sufficiently good characteristics ( I th =3.5 mA, C =0.5 pF. to make up for the disadvantages of LPE, e.g. difficulties in control and uniformity over large areas, an MOVPE selective regrowth method was examined. Laser diodes grown by an entire MOVPE with in-situ HCI vapor phase etching have been successful in pulse oscillation at room temperature ( I th =37mA).