Interface Dipole Modulation in HfO 2 /SiO 2 MOS Stack Structures

We report an electric-field-induced interface dipole modulation (IDM) in HfO 2 /1-ML TiO 2 /SiO 2 MOS stack structures. Experimental evidence for IDM was exhibited, and rearrangement of interfacial Ti-O configuration by an electric field was theoretically demonstrated to cause the potential modulation. Multi-stack HfO 2 /SiO 2 MOSFETs with multiple dipole modulation layers are promising in terms of a low temperature process, practical memory window, and stable potential switching.