Demonstration of Ultraviolet 6H-SiC PIN Avalanche Photodiodes

We report electrical and electrooptical characteristic of mesa-structure 6H-SiC PIN avalanche photodiodes. At a gain of 1000, the dark current density is 9.2 muA/cm 2 . The excess noise factor corresponds to a k value of ~0.1. In addition, peak responsivity of 80 mA/W was observed at 290 nm (external quantum efficiency of ~35%)