Effect of Hydroxyl Group on the Characteristics of Solution Processed n- and p-type OFETs using Poly(p-silsesquioxane) Derivatives as a Gate Insulator

Organic field effect transistors (OFETs) fabricated on the polymer substrate including conductive organic materials and polymeric gate insulator is one of promising devices for the flexible electronic devices. For OFETs with a conductive organic layer formed on the gate insulating materials, the performance of devices strongly depends on the molecular structure of the gate insulators. In this study, we investigated the effect of hydroxyl group of gate insulating materials on the characteristics of n- and p-type OFETs utilizing [6,6]-phenyl C61-butyric acid methyl ester (PCBM), α, ω-dihexylsexithiophene (DH6T) and pentacene OFETs as a conducting layer, respectively. Poly(p-silsesquioxane) (PSQ) derivatives are used as a polymeric gate insulator, which containes various ratios of phenol-group with a hydroxyl group bonded to a phenyl ring in the side chain of their molecular structures.