High-Quality, Highly Concentrated Semiconducting Single-Wall Carbon Nanotubes for Use in Field Effect Transistors and Biosensors

We developed a simple and scalable selective synthesis method of high-quality, highly concentrated semiconducting single-wall carbon nanotubes (s-SWCNTs) by in situ hydrogen etching. Samples containing ∼93% s-SWCNTs were obtained in bulk. These s-SWCNTs with good structural integrity showed a high oxidation resistance temperature of ∼800 °C. Thin-film transistors based on the s-SWCNTs demonstrated a high carrier mobility of 21.1 cm2 V–1 s–1 at an on/off ratio of 1.1 × 104 and a high on/off ratio of 4.0 × 105 with a carrier mobility of 7.0 cm2 V–1 s–1. A biosensor fabricated using the s-SWCNTs had a very low dopamine detection limit of 10–18 mol/L at room temperature.