Nitrogen-doped NDR behavior of double gate graphene field effect transistor

Abstract This paper presents the negative differential resistance (NDR) behavior of double gate graphene field effect transistor. The channel length of the device is considered as 4 nm and source/drain regions are doped with nitrogen atoms. The carrier transport is assumed to be ballistic for the simulation. The semi-empirical Slater-Koster method is used to model the material and Nonequilibrium Green's Function (NEGF) is used for the electron transport study of the device. The NDR behavior of the device is discussed by using the transmission spectrum and device density of state (DDOS). The peak to valley current ratio (PVCR) of 105 is achieved with the peak current of 0.6  μA at room temperature. The other parameters like the NDR voltage window and the peak value of drain current are also discussed quantitatively. The simulation study shows the importance of graphene for negative differential resistance for future scaled electronic device applications.