BYCHKOV–RASHBA SPLITTING IN INVERSION LAYERS ON HEAVILY-DOPED p-HgCdTe

The Bychkov–Rashba effect in metal–insulator–semiconductor (MIS) structures based on zero-gap HgCdTe with different doping level is investigated experimentally and theoretically. The relative difference between electron concentration in different spin-orbit split sub-subband increases with doping and reaches high values as Δn/n~0,5 at NA-ND~1018 cm-3. Contrary to low-doped HgCdTe the splitting, in the samples investigated, exhibits strong concentration dependence in the wide concentration region.