Aiming for the Best Matching Between Ultra-Shallow Doping and Milli-To Femto-Second Activation
2007
Semiconductors have been successfully produced by the miniaturization of planar transistors and their transformation into a 3D structure. This innovation will realize ideal performance in electric devices. In this article, plasma doping combined with several state-of-the-art rapid thermal processing is shown to be a technology for enabling the fabrication of miniaturized 2D devices and advanced 3D structures.
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