30 nm CoSi2 surface layers for contact metallization in complementary metal-oxide-semiconductor processes

Thin, low resistivity CoSi2 and TiSi2 surface layers have been realized through room‐temperature ion implantation of Co+ and Ti+, respectively, followed by low‐temperature annealing. TEM studies show that the layers are polycrystalline with large, uniformly thick grains. The results of leakage current measurements performed on junctions fabricated with and without CoSi2 surface layers illustrate the potential of this technique for contact metallization in sub‐half‐micron CMOS processes.