Preliminary ionizing radiation tests on n-channel inversion-mode GaInAs MISFET's
1986
Preliminary results of low-dose rate ionizing radiation (cobalt-60) tests on n-channel inversion-mode GaInAs MISFET's up to a total dose of 5 × 10 7 rad(Si) are presented. The data show that the GaInAs MISFET threshold voltage shifts negatively up to a total dose of 5 × 10 5 rad(Si), with a maximum shift of -0.9 V. The threshold voltage then shifts in a positive direction at higher doses. The mobility factor decreases very slightly and then increases with increasing dose.
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