Old Web
English
Sign In
Acemap
>
Paper
>
Enhancement of Electrical Characteristics Using a Nanoscale Inserted Gate Structure in FinFET
Enhancement of Electrical Characteristics Using a Nanoscale Inserted Gate Structure in FinFET
2017
Joonsung Ahn
Keon-Ho Yoo
Tae Whan Kim
Keywords:
Materials science
Nanotechnology
Nanoscopic scale
Inorganic chemistry
Correction
Source
Cite
Save
Machine Reading By IdeaReader
0
References
0
Citations
NaN
KQI
[]