Encapsulation structure and encapsulation method of optoelectronic device

The invention discloses an encapsulation structure and encapsulation method of an optoelectronic device. The encapsulation structure includes a film encapsulation layer coating the optoelectronic device; inorganic encapsulation material layers and ultraviolet light cured resin layers are superimposed alternately so as to form the film encapsulation layer. The ultraviolet light cured resin is composed of the following components by mass percentage: shellac; glycerol; lead oxide; toluene diisocyanate; trimethylolpropane; hydroquinone; tetrahydrofuran; 2-hydroxyethyl methacrylate; dibutyltin dilaurate; 2, 2- dimethoxy-phenyl ketone and methyl methacrylate. With the encapsulation structure adopted, oxygen and water in the surrounding environment can be effectively blocked, and the improvement of the stability of the device can be benefitted, and the service life of the device can be prolonged. The encapsulation method has the advantages of simple preparation process and low cost.