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Improvement in resistive switching parameters by selecting the SET polarity in IrO x /TaO x /WO x /W structure
Improvement in resistive switching parameters by selecting the SET polarity in IrO x /TaO x /WO x /W structure
2011
A. Prakash
S Maikap
Chao-Sung Lai
Heng Yuan Lee
Wei-Su Chen
Frederick T. Chen
Ming-Jer Kao
Ming-Jinn Tsai
Keywords:
Nanotechnology
Nuclear magnetic resonance
Resistive touchscreen
Materials science
Polarity (international relations)
resistive switching
Optoelectronics
Correction
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