Field effect studies in a p‐type SnTe metal‐insulator‐semiconductor structure

Field effect studies have been made on the electrical properties of a silver mica p‐type Sn Te thin film metal‐insulator‐semiconductor structure in the temperature range 100‐300 K. It has been observed that the Hall coefficient decreases with an increase in the negative gate field, while the effect of a positive gate field is the opposite. The mobility, however, increases with an increase in the positive gate field in the low temperature region, and decreases sharply as the temperature increases. The negative field, on the other hand, reduces the mobility in the whole temperature range. The results have been explained on the basis of a two valence band model of Sn Te.