In-plane anisotropy in La0.7Sr0.3MnO3 (LSMO) patterned thin film

We report an anisotropy in the resistivity with in-plane applied magnetic field for patterned thin film of LSMO(32 nm) on STO (001) substrate with aspect ratio of 20. Anisotropy in the electrical resistivity ρAMR∼0.51% is observed at room temperature. Decrease in the resistivity, when applied current and magnetic field are perpendicular to each-other, is due availability of small cross-sectional area for scattering. In this experiment, we have measured these values at 300 K, 200 K, 100 K and 10 K, with 5 kOe in-plane magnetic field and observed that AMR decrease with decrease in the temperature due to availability of lesser thermal energy.