High Power Pulsed IMPATT Oscillator Near 140 GHz

IMPATT diodes with a double drift p+-p-n-n+ doping profile were fabricated and tested for high power pulsed operation. Using a pulse width of 100 ns and a 0.5% duty factor, a peak output power of 3.0W with 2.8% conversion efficiency has been measured at 140 GHz.