Terahertz light emitting transistor based on current injection dualgate graphene-channel FET

We report on amplified spontaneous broadband terahertz emission in 1–7.6 THz range at 100 K via current injection in a distributed-feedback dual-gate graphene-channel field effect transistor (DFB-DG GFET). The device exhibited a nonlinear threshold-like behavior with respect to the current-injection level. A precise DFB cavity design is expected to transcend the observed spontaneous broadband emission to single-mode THz lasing.