Effects of nitrogen incorporation HfAlO x films on gate leakage current from XPS study of Hf bonding states

T. Nishimura,Kunihiko Iwamoto,K Tominaga,Tetsuji Yasuda,Wataru Mizubayashi,S. Fujii,T. Nabatame,A. Toriumi

Effects of nitrogen incorporation HfAlO x films on gate leakage current from XPS study of Hf bonding states

2003

T. Nishimura
Kunihiko Iwamoto
K Tominaga
Tetsuji Yasuda
Wataru Mizubayashi
S. Fujii
T. Nabatame
A. Toriumi

In this paper, we focus on the impact of N incorporation on the gate leakage current and the modification of the bonding configuration of HfAlO/sub x/(N) network.

Keywords:

High-κ dielectric
Nitrogen
Leakage (electronics)
Gate dielectric
Optoelectronics
MOSFET
Dielectric
Analytical chemistry
X-ray photoelectron spectroscopy
Silicon
Materials science
gate leakage current

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