2-D Modeling of Electronic Noise in Semiconductor Devices

We present two deterministic approaches for the calculation of electronic noise in semiconductor devices. Both approaches are based on the calculation of the impedance field. The former (transfer impedance) is applied to 1D Si p+pp+ diodes in the framework of drift-diffusion, hydrodynamic and scattered packet methods. The later (Langevin) is checked on the same diodes and applied to Si MESFETs in the framework of drift-diffusion method.