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Stoichiometric ECR SiO2 interlayer for polysilicon emitter bipolar transistors using MBE system
Stoichiometric ECR SiO2 interlayer for polysilicon emitter bipolar transistors using MBE system
1990
Fumihiro Sato
Hideo Takemura
Tsutomu Tashiro
Toru Tatsumi
T. Niino
Naoaki Aizaki
M. Nakamae
Keywords:
Physics
Nuclear magnetic resonance
Molecular beam epitaxy
Bipolar junction transistor
Common emitter
Electron cyclotron resonance
Stoichiometry
X-ray photoelectron spectroscopy
Correction
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