Estimation of the /spl Gamma/-X crossover composition in disordered (Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P using n-i-n diodes

The conduction band offset between (Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P and Ga/sub 0.5/In/sub 0.5/P has been determined from the I-V characteristics of n-i-n diodes fabricated from these materials. These measurements were made as a function of temperature for various aluminium compositions, x, thus providing an estimate of the /spl Gamma/-X crossover composition in the AlGaInP.