Dynamic characterization of high voltage power MOSFETs for behavior simulation models

This paper describes the determination of interelectrode capacitances of a fast switching high voltage super junction transistor from dynamic measurements in a commutation circuit with a SiC Schottky diode. The gained capacitance voltage characteristics reflect the transistor's effective parasitic capacitances during switching for the given application. Thus, these characteristics are used for the transistor's parameterization within a buck converter simulation model. The resulting switching simulation characteristics of the transistor correspond virtually with the appendant dynamic measurements.