Epitaxial growth of BaF2 on semiconductor substrates

Abstract We used Rutherford backscattering and channeling and transmission electron microscopy (TEM) to study the epitaxial growth of BaF 2 vacuum deposited onto InP(100), InP(111), Ge(100) and Ge(111). We observed no epitaxy in BaF 2 on Ge(100). The other three cases all show epitaxy, with quality ranging from poor for BaF 2 on InP(111) through fair for BaF 2 on InP(100) to excellent for BaF 2 on Ge(111). Epitaxial quality depends strongly on substrate temperature for BaF 2 on Ge(111). TEM analysis indicates that there are neither misfit dislocations nor coherence at the BaF 2 Ge(111) interface in spite of the 9.1% lattice mismatch.