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Stress analysis method for 4H-SiC power devices
Stress analysis method for 4H-SiC power devices
2016
Hiroki Sakakima
Yoichi Murakami
Satoshi Izumi
Akihiro Goryu
Kenji Hirohata
Keywords:
Power semiconductor device
Raman spectroscopy
Materials science
Analytical chemistry
Optoelectronics
analysis method
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