Physical Modelling of Thin Base n-p-n Bipolar Transistor with Contact Silicidation

The aim of this paper is to investigate the influence of the SALICIDE (Self Aligned Silicide) process on thin base n-p-n bipolar transistor by means of numerical simulation. Process simulations using advanced physical models of silicide formation have been carried out. They show the effect of injected vacancies on dopant redistribution during silicidation. Device simulation has then been used to evaluate the influence of this redistribution on the electrical characteristics of this thin base n-p-n bipolar transistor.