High-voltage power MOSFETs reached almost to the silicon limit

New technologies for non-superjunction high-voltage power MOSFETs have been developed and experimentally confirmed. R/sub ON//spl middot/A achieved are as low as 110% of the silicon limit and R/sub ON//spl middot/Q/sub GD/ achieved are only 50 to 60% of the best data found. Due to the drastic improvement of R/sub ON//spl middot/Q/sub GD/, the developed devices have improved the power conversion efficiency of a fly-back converter by several percent. The total cost over performance of the power conversion systems can be improved by utilizing the developed technologies.