Method for etching NiCrSi film through wet process

The invention relates to a method for etching a NiCrSi film through a wet process. Since a step of washing the two surfaces of a silicon wafer at a short distance by separately using a water gun, the problem that cerium sulfate on the surface of the silicon wafer is difficult to remove by adopting the existing conventional etching method is effectively solved. Since the product cerium sulfate which is obtained after the NiCrSi film is etched through the wet process is insoluble in water, the method is not suitable for etching multiple silicon wafers which can be etched at one time by adopting the conventional etching method and the method is only suitable for etching the silicon wafers one by one, the cost control of raw materials of the method is superior to the cost control of the raw materials of the conventional etching method. By using fixed supports and culture dishes, the problem that the conventional method is inconvenient to operate is effectively solved; and by using clamping apparatuses which are separately used for placing the silicon wafers and are respectively provided with a lifting handle, the problem of excessive etching of the conventional etching method is effectively solved. After the NiCrSi film is etched by adopting the method, the point defects caused by the cerium sulfate on the surface of the silicon wafer are smaller than 20 per field of view and the qualified rate of the processed surfaces after microscopic examination can reach more than 90%.