Dissolution of electrically inactive phosphorus by low temperature annealing

In this study we investigate the dissolution of electrically inactive phosphorus complexes by low temperature annealing after the POCl3 diffusion process. This has the immediate consequence that the existing near-surface emitter volume SRH recombination can be reduced. Thereby, a significant reduction of emitter saturation current density j0E is achieved without driving the emitter further into the silicon substrate. For short-term temperature treatments well below the POCl3 diffusion temperature, a reduction of up to -60 fA/cm2 has been achieved. This study increases our understanding of the formation and dissolution of electrically inactive phosphorus complexes during post-annealing processes.